Memory
Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 GT/s. The new 3D TLC NAND memory will initially be used to build high-capacity and high-performance SSDs, which will help to solidify Samsung's position in the storage market. Diving right in, Samsung is conspicuously avoiding to list the number of layers in their latest generation NAND, which is the principle driving factor in increasing capacity generation-on-generation. The company's current 8th gen V-NAND is 236 layers – similar to its major competitors – and word on the street is that 9th gen V-NAND ups...
Weekly Memory & Motherboard Price Guide: March 2001 1st Edition
It's Price Guide time and what a time it is to purchase memory and motherboards. The prices of Socket-A motherboards and the rest of the boards in general...
0 by Kiran Venkatesh on 3/2/2001Rambus DRAM Part 2: Performance
Last week we took a look at the theory behind the need for a higher bandwidth solution and illustrated that RDRAM was a solution that could potentially fit the...
0 by Anand Lal Shimpi on 5/22/2000Rambus DRAM: Uncovering Facts & Burying Rumors
There is a lot of misinformation floating around the 'net regarding a little company known as Rambus and their extremely expensive memory technology. Would you believe that we...
2 by Anand Lal Shimpi on 5/15/2000PC133 SDRAM Roundup - April 2000
For the first time in a year we take a look at the latest SDRAM modules out on the market and crown a winner. This time around the...
0 by Anand Lal Shimpi on 4/3/2000